Chen Qi, Joule: 23.9% Efficiency! Dual Back-Contact Interface Layer for High-Efficiency and Stable Perovskite Solar Cells
Release Date:
2021-07-12 15:29
Source:
As perovskite solar cells (PSCs) move toward practical applications, both high efficiency and long-term stability are essential, with the interfaces playing a crucial role. Researchers led by Qi Chen at Beijing Institute of Technology have developed interface layers and electrode buffer layers tailored for the hole-transport layer (HTL), achieving a dual-side back field (SEB) at the two relevant interfaces.
By forming a SEB—specifically, F4-TCNQ/HTL/F4-TCNQ—at the two interfaces adjacent to the hole-transport layer (HTL)—F4-TCNQ is used to bridge the light-absorbing layer to the back electrode, achieving the desired band alignment and multi-defect passivation, thereby stabilizing the perovskite, HTL, and metal electrode. Consequently, planar n-i-p PSCs incorporating this SEB have achieved an efficiency of 23.9% (certified as 23.4%) on an active area of 0.12 cm². 2。
Notably, SEB-based PSCs exhibit exceptional operational stability. After 2,000 hours of illumination under standard solar conditions, the maximum power point tracking efficiency declines by only 3%. Moreover, these devices demonstrate outstanding thermal and humidity stability. Consequently, SEB enhances both the efficiency and stability of PSCs, paving the way for the commercialization of perovskite photovoltaics.
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